資料來源 : Free On-Line Dictionary of Computing

Page Mode Dynamic Random Access Memory
     
         A technique used to support faster
        sequential access to {DRAM} by allowing any number of accesses
        to the currently open row to be made after supplying the {row
        address} just once.
     
        The {RAS} signal is kept active, and with each {falling edge}
        of the {CAS}\ signal a new {column address} can be supplied
        and the corresponding bits can be accessed.  This is faster
        than a full RAS-CAS cycle because only the shorter Column
        Access Time needs to be obeyed.
     
        Note that strictly speaking such a DRAM is not a true {random
        access memory} since accesses to the open row are faster than
        to other locations.
     
        {EDO RAM} is replacing Page Mode DRAM in many new
        microcomputers.
     
        [Is "Fast Page Mode" the same as "Page Mode"?]
     
        (1996-10-06)