資料來源 : Free On-Line Dictionary of Computing

dynamic random access memory
     
         (DRAM) A type of {semiconductor} memory in which the
        information is stored in {capacitors} on a {MOS} {integrated
        circuit}.  Typically each {bit} is stored as an amount of
        electrical charge in a storage cell consisting of a capacitor
        and a {transistor}.  Due to leakage the capacitor discharges
        gradually and the memory cell loses the information.
        Therefore, to preserve the information, the memory has to be
        refreshed periodically.  Despite this inconvenience, the DRAM
        is a very popular memory technology because of its high
        density and consequent low price.
     
        The first commercially available DRAM chip was the {Intel
        1103}, introduced in 1970.
     
        The early DRAM chips up to a 16k x 1 (16384 locations of one
        bit each) model needed 3 supply voltages (+5V, -5V and +12V).
        Beginning with the 64 kilobit chips, {charge pumps} were
        included on-chip to create the necessary supply voltages out
        of a single +5V supply.  This was necessary to fit the device
        into a 16-pin {DIL} package, which was the preferred package
        at the time, and also made them easier to use.
     
        To reduce the pin count, thereby helping miniaturisation,
        DRAMs generally had a single data line which meant that a
        computer with an N bit wide {data bus} needed a "bank" of (at
        least) N DRAM chips.  In a bank, the address and control
        signals of all chips were common and the data line of each
        chip was connected to one of the data bus lines.
     
        Beginning with the 256 kilobit DRAM, a tendency toward
        {surface mount} packaging arose and DRAMs with more than one
        data line appeared (e.g. 64k x 4), reducing the number of
        chips per bank.  This trend has continued and DRAM chips with
        up to 36 data lines are available today.  Furthermore,
        together with surface mount packages, memory manufacturers
        began to offer memory modules, where a bank of memory chips
        was preassembled on a little {printed circuit} board (SIP =
        Single Inline Pin Module, SIMM = Single Inline Memory Module,
        DIMM = Dual Inline Memory Module).  Today, this is the
        preferred way to buy memory for {workstations} and {personal
        computers}.
     
        DRAM bit cells are arranged on a chip in a grid of rows and
        columns where the number of rows and columns are usually a
        power of two.  Often, but not always, the number of rows and
        columns is the same.  A one megabit device would then have
        1024 x 1024 memory cells.  A single memory cell can be
        selected by a 10-bit row address and a 10-bit column address.
     
        To access a memory cell, one entire row of cells is selected
        and its contents are transferred into an on-chip buffer.  This
        discharges the storage capacitors in the bit cells.  The
        desired bits are then read or written in the buffer.  The
        (possibly altered) information is finally written back into
        the selected row, thereby refreshing all bits (recharging the
        capacitors) in the row.
     
        To prevent data loss, all bit cells in the memory need to be
        refreshed periodically.  This can be done by reading all rows
        in regular intervals.  Most DRAMs since 1970 have been
        specified such that one of the rows needs to be refreshed at
        least every 15.625 microseconds.  For a device with 1024 rows,
        a complete refresh of all rows would then take up to 16 ms; in
        other words, each cell is guaranteed to hold the data for 16
        ms without refresh.  Devices with more rows have accordingly
        longer retention times.
     
        Many varieties of DRAM exist today.  They differ in the way
        they are interfaced to the system - the structure of the
        memory cell itself is essentially the same.
     
        "Traditional" DRAMs have multiplexed address lines and
        separate data inputs and outputs.  There are three control
        signals: RAS\ (row address strobe), CAS\ (column address
        strobe), and WE\ (write enable) (the backslash indicates an
        {active low} signal).  Memory access procedes as follows:
        1. The control signals initially all being inactive (high), a
        memory cycle is started with the row address applied to the
        address inputs and a falling edge of RAS\ .  This latches the
        row address and "opens" the row, transferring the data in the
        row to the buffer.  The row address can then be removed from
        the address inputs since it is latched on-chip.  2. With RAS\
        still active, the column address is applied to the address
        pins and CAS\ is made active as well.  This selects the
        desired bit or bits in the row which subsequently appear at
        the data output(s).  By additionally activating WE\ the data
        applied to the data inputs can be written into the selected
        location in the buffer.  3. Deactivating CAS\ disables the
        data input and output again.  4. Deactivating RAS\ causes the
        data in the buffer to be written back into the memory array.
     
        Certain timing rules must be obeyed to guarantee reliable
        operation.  1. RAS\ must remain inactivate for a while before
        the next memory cycle is started to provide sufficient time
        for the storage capacitors to charge (Precharge Time).  2. It
        takes some time from the falling edge of the RAS\ or CAS\
        signals until the data appears at the data output.  This is
        specified as the Row Access Time and the Column Access Time.
        Current DRAM's have Row Access Times of 50-100 ns and Column
        Access Times of 15-40 ns.  Speed grades usually refer to the
        former, more important figure.
     
        Note that the Memory Cycle Time, which is the minimum time
        from the beginning of one access to the beginning of the next,
        is longer than the Row Access Time (because of the Precharge
        Time).
     
        Multiplexing the address pins saves pins on the chip, but
        usually requires additional logic in the system to properly
        generate the address and control signals, not to mention
        further logic for refresh.  Therefore, DRAM chips are usually
        preferred when (because of the required memory size) the
        additional cost for the control logic is outweighed by the
        lower price.
     
        Based on these principles, chip designers have developed many
        varieties to improve performance or ease system integration of
        DRAMs:
     
        PSRAMs (Pseudo Static Random Access Memory) are essentially
        DRAMs with a built-in address {multiplexor} and refresh
        controller.  This saves some system logic and makes the device
        look like a normal {SRAM}.  This has been popular as a lower
        cost alternative for SRAM in {embedded systems}.  It is not a
        complete SRAM substitute because it is sometimes busy when
        doing self-refresh, which can be tedious.
     
        {Nibble Mode DRAM} can supply four successive bits on one data
        line by clocking the CAS\ line.
     
        {Page Mode DRAM} is a standard DRAM where any number of
        accesses to the currently open row can be made while the RAS
        signal is kept active.
     
        Static Column DRAM is similar to Page Mode DRAM, but to access
        different bits in the open row, only the column address needs
        to be changed while the CAS\ signal stays active.  The row
        buffer essentially behaves like SRAM.
     
        {Extended Data Out DRAM} (EDO DRAM) can continue to output
        data from one address while setting up a new address, for use
        in {pipelined} systems.
     
        DRAM used for Video RAM ({VRAM}) has an additional long
        shift register that can be loaded from the row buffer.  The
        shift register can be regarded as a second interface to the
        memory that can be operated in parallel to the normal
        interface.  This is especially useful in {frame buffers} for
        {CRT} displays.  These frame buffers generate a serial data
        stream that is sent to the CRT to modulate the electron beam.
        By using the shift register in the VRAM to generate this
        stream, the memory is available to the computer through the
        normal interface most of the time for updating the display
        data, thereby speeding up display data manipulations.
     
        SDRAM (Synchronous DRAM) adds a separate clock signal to the
        control signals.  It allows more complex {state machines} on
        the chip and high speed "burst" accesses that clock a series
        of successive bits out (similar to the nibble mode).
     
        CDRAM (Cached DRAM) adds a separate static RAM array used for
        caching.  It essentially combines main memory and {cache}
        memory in a single chip.  The cache memory controller needs to
        be added externally.
     
        RDRAM (Rambus DRAM) changes the system interface of DRAM
        completely.  A byte-wide bus is used for address, data and
        command transfers.  The bus operates at very high speed: 500
        million transfers per second.  The chip operates synchronously
        with a 250MHz clock.  Data is transferred at both rising and
        falling edges of the clock.  A system with signals at such
        frequencies must be very carefully designed, and the signals
        on the Rambus Channel use nonstandard signal levels, making it
        incompatible with standard system logic.  These disadvantages
        are compensated by a very fast data transfer, especially for
        burst accesses to a block of successive locations.
     
        A number of different refresh modes can be included in some of
        the above device varieties:
     
        RAS\ only refresh: a row is refreshed by an ordinary read
        access without asserting CAS\.  The data output remains
        disabled.
     
        CAS\ before RAS\ refresh: the device has a built-in counter
        for the refresh row address.  By activating CAS\ before
        activating RAS\, this counter is selected to supply the row
        address instead of the address inputs.
     
        Self-Refresh: The device is able to generate refresh cycles
        internally.  No external control signal transitions other than
        those for bringing the device into self-refresh mode are
        needed to maintain data integrity.
     
        (1996-07-11)